Institute for Single Crystals

National Academy of Sciences of Ukraine

61001, Ukraine, Kharkiv, 60 Nauky Ave., phone/fax: +38(057)340-86-19, e-mail:

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Sapphire Substrates for Micro- and Optoelectronics


Engineering Service - Bridgman

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Bridgman method under high pressure of inert gas allows to grow single crystals of highly volatile substances, what are for example II-VI compounds. The main advantage of vertical Bridgman crystal growth process among other crystal growth techniques is its simplicity.

Crystal growth furnace to implement the high pressure Bridgman crystal growth technology for II-VI crystal growth from melt is available to be ordered and customized for selected crystal material.

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Our adress:

61001, Kharkov, 60 Lenin Ave.
phone:  +38(057)340-86-19,
fax:       +38(057)340-86-19,