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Institute for Single Crystals

National Academy of Sciences of Ukraine

61001, Ukraine, Kharkiv, 60 Nauky Ave., phone/fax: +38(057)340-86-19, e-mail: info@iscrystals.com

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Sapphire Substrates for Micro- and Optoelectronics

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News

New nanograined optical ceramics (Y1-xEux)2O3 has been sintered

08.06.2012

The new type of optical ceramics (Y1-xEux)2O3 with nanograined structure has been obtained in collaboration with V.Bakul ISM, NAS of Ukraine, Kyiv.

New laser material: Zn1-xMgxSe:Fe2+

16.05.2012

The crystals of  new active medium of Zn1-XMgXSe: Fe2+ for tunable mid-IR lasers were proposed and grown.



New type of crystalline high–dispersive powders based on mesoporous Y2O3 spherical particles was developed

27.04.2012

New type of crystalline high–dispersive powders based on mesoporous Y2O3 spherical particles with ZnO nanocrystals being grown within voids of Y2O3 was developed.




Sapphire crystals with record thickness of plates - 80mm are grown

29.03.2012


The Horizontal Directed Solidification Method (HDSM) allows the obtaining of 350x170x80 mm3 crystal plates.




Laser media based on SiO2 matrices is obtained

19.04.2012


High optical quality SiO2 matrices with incorporated molecules of laser dyes were synthesized by the sol-gel method.



New nanocrystal emissive material for QD-LED is prepared

20.06.2011

New emissive material for the quantum dot light emitting diode (QD-OLED) is developed on the base of a polymer semiconductor and core-shell CdSe/ZnS nanocrystals.




ZnSe(Fe) : new laser media is obtained and tested

10.06.2011

ZnSe:Fe crystals are grown by the vertical Bridgman. Cystals is intended for manufacturing of active elements for tunable mid-IR lasers.


Ti:sapphire size limit is extended

07.06.2011

Ti:sapphire crystal of large size (175x200x40 mm3) was first obtained by HDSM method. Crystal has a laser-quality and is characterized by uniform activator distribution.

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61001, Kharkov, 60 Lenin Ave.
phone:  +38(057)340-86-19,
fax:       +38(057)340-86-19,
e-mail:   info@iscrystals.com